| PART |
Description |
Maker |
| PN10-8FF-L PN10-10FF-D |
12-10 BARREL NYLON INSUL FLANGED FORK 225 5.72 MAX WIRE INSUL DIA
COPPER ALLOY, TIN FINISH, FORK TERMINAL
|
PANDUIT CORP.
|
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| HAT1038R HAT1038RJ HAT1038RD |
Power switching MOSFET
Silicon P Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| 19007-0032 19005-0001 19005-0015 19007-0029 19007- |
.187X.020 FIQD FLAG EXP. TAPED (BB-2224X 2 mm2, PUSH-ON TERMINAL
Female Disconnect Solderless Terminal; Wire Size (AWG):18-22; Tab Width:0.250"; Insulator Color:Pink; Terminal Insulation:Nylon; Gender:Female 0.8 mm2, PUSH-ON TERMINAL
.250X.032 FEM.FIQD COUPLER TP (C-2265T) 5 mm2, PUSH-ON TERMINAL
CONN .187 FLAG INSUL 14-16AWG 2 mm2, PUSH-ON TERMINAL
.250X.032 FIQD FLAG STRIP(AA-2220Z) RoHS Compliant: Yes 0.8 mm2, PUSH-ON TERMINAL
CONN .250 FLAG INSUL 18-22AWG 0.8 mm2, PUSH-ON TERMINAL
.187X.020 FIQD FLAG (AA-2222) 0.8 mm2, PUSH-ON TERMINAL
.187X.032 FIQD FLAG (BB-2225) 2 mm2, PUSH-ON TERMINAL
CONN .250 MALE INSUL 14-16AWG 2 mm2, TAB TERMINAL
190070020
|
Molex, Inc.
MOLEX INC
|
| FS70VSJ-06F FS70VSJ-06F-A1 FS70VSJ-06F-T11 |
70 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET
High-Speed Switching Use Nch Power MOS FET
Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
| GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http://
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252
HIGH CURRENT SWITCHING APPLICATION 大电流开关应
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
|
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
|
| MP4703 E002536 |
HIGH POWER , HIGH SPEED SWITCHING APPLICATIONS HA MMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| MP4501 |
N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
